SnSe thin film electrodes prepared by vacuum evaporation: Enhancement of surface morphology and photoelectrochemical characteristics by argon gas
Publication Type
Original research
Authors
Hikmat S. Hilal
Nordin Sabli
Zainal Abidin Talib
Wan Mahmood Mat Yunus
Zulkarnain Zainal
Masatoshi Fujii
The effect of argon gas condensation (AGC) on crystallinity, surface morphology and
photoelectrochemical (PEC) characteristics of SnSe thin films, prepared by thermal vacuum deposition
onto ITO/glass substrates, has been investigated. The focal theme was to improve growth process of
SnSe thin films and consequently enhance their PEC characteristics. For comparison purposes, the
films grown with and without argon gas were characterized using various techniques such as X-Ray
diffractometry, UV-VIS spectroscopy, and SEM. The results indicate enhancement in crystallinity and
surface uniformity of the film by inclusion of argon gas during thermal vacuum deposition. Such
enhancement has been attributed to slower deposition rate due to argon gas presence. Photoactivity of
SnSe thin film electrodes was studied using linear sweep voltammetry. The With-AGC electrodes
showed higher photoactivity than the Without-AGC counterparts. Enhancement of PEC characteristics
of SnSe With-AGC thin film electrodes is consistent with crystallinity and surface uniformity. Inclusion
of AGC in thermal vacuum deposition processes could thus be potentially valuable to prepare enhanced
SnSe thin film electrodes without the need for further treatments such as etching or annealing.