Heterojunctions based on p-CuO/n-ZnO, prepared by simple methods such as spin coating, normally exhibit low photoconversion efficiencies, and need modification. Doping the ZnO layer with various ions such as Sn⁴⁺ could be a solution. In this work, the heterojunctions have been prepared by two simple methods. To prepare the CuO@ZnO junction, by method 1, the n-ZnO layer has been spin-coated on tin-doped indium oxide/glass substrates (ITO/glass) followed by spin coating of the p-CuO layer. To prepare the ZnO@CuO/Cu sheet junction, by method 2, the p-CuO layer has been prepared by thermal oxidation of Cu metal sheet, followed by spin coating of ZnO. In both cases, the ZnO film has been doped with Sn⁴⁺ ions at 1.5% concentration by mole. Sn-doping effects, on structural and morphological properties of the junction, have been comparatively studied by X-ray diffraction and atomic force microscopy. In both preparations, doping affects optical, electrical and photovoltaic (PV) properties. Preparation method also affects junction characteristics, as preparation method 2 shows heterojunctions with higher PV characteristics. The results show inroads to improve PV characteristics for the heterojunction based on the proper preparation method and Sn doping

Title

Journal of Electronic Materials

Publisher

Springer

Publisher Country

Germany

Indexing

Thomson Reuters

Impact Factor

2.1

Publication Type

Both (Printed and Online)

Volume

--

Year

2024

Pages

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