EXAFS measurements were performed, at the In K edge, on devitrified Ge5Se80In15 and on a series of vitreous Ge–Se–In alloys. The results indicate that the In atoms have essentially the same local surroundings in all of the samples investigated. We found that an In atom is surrounded by three Se atoms at a distance of about 0.259 nm and forms In2Se3 microclusters.