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Surface Modified n-GaAs Semiconductor with Metalloporphyrinatomanganese (III) encapsulated in Poly…
Surface Modified n-GaAs Semiconductor with Metalloporphyrinatomanganese (III) encapsulated in Polysiloxane matrices: Effect of Modification on the Semiconductor Characteristics at the Solid/Liquid Junction
Publication Type
Conference Paper
Authors
Samar Al Shakhshir
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Conference
Conference Title
Sharjah Intermational Solar Energy Conference
Conference Country
Palestine
Conference Date
Jan. 1, 2003 - Jan. 2, 2003
Conference Sponsor
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