Effect of Argon Gas Flow Rate on Properties of Film Electrodes Prepared by Thermal Vacuum Evaporation from synthesized Cu2SnSe3 Source
- Publication Type
- Original research
- Authors
- Nordin Sabli
- Zainal Abidin Talib
- Wan Mahmood Mat Yunus
- Zulkarnain Zainal
- Hikmat S. Hilal
- Masatoshi Fujii
This work describes a new technique to enhance photoresponse of metal chalcogenide-based semiconductor
film electrodes deposited by thermal vacuum evaporation under argon gas flow from synthesized Cu2SnSe3 sources. SnSe
formation with Cu-doped was obtained under higher argon gas flow rate (VA = 25 cm3/min). Higher value of
photoresponse was observed for films deposited under VA = 25 cm3/min which was 9.1%. This finding indicates that Cu
atoms inside the SnSe film were important to increase carrier concentrations that promote higher photoresponse.
Journal
- Title
- AIP Conference Proceedings, 1588, (2014) 261-264; doi: 10.1063/1.4866957
- Publisher
- --
- Publisher Country
- Palestine
- Publication Type
- Both (Printed and Online)
- Volume
- --
- Year
- 2014
- Pages
- --